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| inchange semiconductor product specification silicon npn power transistors BU505DF description ? with to-220fa package ? high voltage,high speed ? with integrated efficiency diode applications ? for horizontal deflection circuits of color tv receivers. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 2.5 a i cm collector current (peak) 4 a i b base current 2 a i bm base current(peak) 4 a p tot total power dissipation t c =25 ?? 20 w t j max.operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-a thermal resistance from junction to ambient 55 k/w
inchange semiconductor product specification 2 silicon npn power transistors BU505DF characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0;l=25mh 700 v v (br)ebo emitter-base breakdown voltage i e =600ma ;i c =0 7.5 13.5 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.9 a 1.0 v v besat base-emitter saturation voltage i c =2a ;i b =0.9 a 1.3 v i ces collector cut-off current v ce =1500v ; v be =0; t c =125 ?? 0.15 1.0 ma h fe-1 dc current gain i c =0.1a ;v ce =5v 6 30 h fe-2 dc current gain i c =2a ;v ce =5v 2.22 v f diode forward voltage i f =2a 1.8 v f t transition frequency i c =0.1a ;v ce =5v 7 mhz c c collector output capacitance i e =0;f=1mhz;v cb =10v 65 pf inchange semiconductor product specification 3 silicon npn power transistors BU505DF package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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